Colloquium with Prof. D r. Marcelo Ackermann and Sylvia Spies (VU Amsterdam)
12:30 - 12:50 Sylvia Spies, PhD candidate, Biophotonics & Medical Imaging, VU Amsterdam
Titel: Rapid A ssessment of Biopsies using Higher Harmonic Generation Microscopy
Abstract: Histopathology is the gold standard for cancer diagnosis. However, this technique is time-consuming and labo r-intensive and cannot provide rapid feedback during clinical procedu res. A rapid assessment of biopsies could help in decision making dur ing biopsy procedures (or surgeries) and could create opportunity for a 'one-stop-shop', where diagnosis and treatment are combined into o ne procedure.
Higher harmonic generation (HHG) microscopy combines third harmonic generation (THG), second harmonic generation (SHG) and two- and three-photon excited autofluorescence (2PEF and 3 PEF) to visualize cells, collagen, elastin and other fluorescent mole cules, without any preparation or staining. Imaging is achieved withi n 1-3 seconds per field of view (400x400 μm), allowing a biopsy to b e scanned in a few minutes.
We are performing multiple studies at the Amsterdam UMC, mainly on lung cancer, but also some other orga ns. HHG-imaging reveals histology-like architectural features and cel lular details, while also providing complementary information such as clear differentiation between collagen and elastin. In addition, we are working on AI models to automatically analyze the images. Therefo re, HHG has promising clinical applications and may even create oppor tunity for the ‘one-stop-shop’.
12:50 -13:45 Prof. Dr. Marcelo Ackermann, director ARCNL
Ti tel: Pushing for record reflectivity for soft X-ray and EUV mul tilayers
Abstract: EUV lithography ha d taken the world by storm. From ASML to NVIDIA – all rely on EUV t echnology to supply the world with ever more powerful chips to enable our hunger for data and AI. One of the key items in lithography are the combination of world leading light source (to make the photons) a nd optics (to transport the light and create an image on a wafer). Th e combination of both was probabaly one of the biggest challenges for EUV lithography. I will present the science and development of the E UV multilayer mirrors, with d-spacing in the range of a few nm are at the heart of modern EUV lithography equipment. Their reflectivity de termines how much light gets reflected from the source to a wafer. Th e quality of the thin films making up the multilayer, but most import antly the sharpness of the interface between the layers is key to ach ieve high reflectivity. Roughness, intermixing and compound formation at these interfaces result in losses. In order to improve these inte rfaces, metrology is needed to resolve on the atomic level, what the driving mechanisms are that lead to reflectivity loss. At the sub-nm scale, a single technique is often insufficient to fully understand t he physics of intermixing: Whereas TEM and XRR can resolve the local atomic or electronic density, XPS is optimal to highlight compound fo rmation. We demonstrate that only a combination these techniques can truly resolve the interface. Using this knowledge on the nm-scale, we optimize the multilayer using diffusion barriers to limit intermixin g and low energy ion polishing to minimize roughness, resulting in re cord reflectivities for EUV lithography at 13.5nm.
DESCRIPTION: 12:30 - 12:50 Sylvia Spies, PhD candidate, Biopho tonics & Medical Imaging, VU Amsterdam Titel: Rapid Assessment of Biopsies using Higher Harmonic Generation Microscopy Abstract: Histopathology is the gold stan dard for cancer diagnosis. However, this technique is time-consuming and labor-intensive and cannot provide rapid feedback during clinical procedures. A rapid assessment of biopsies could help in decision ma king during biopsy procedures (or surgeries) and could create opportu nity for a 'one-stop-shop', where diagnosis and treatment are combine d into one procedure. Higher harmonic generation (HHG) microsco py combines third harmonic generation (THG), second harmonic generati on (SHG) and two- and three-photon excited autofluorescence (2PEF and 3PEF) to visualize cells, collagen, elastin and other fluorescent mo lecules, without any preparation or staining. Imaging is achieved wit hin 1-3 seconds per field of view (400x400 μm), allowing a biopsy to be scanned in a few minutes. We are performing multiple studies at t he Amsterdam UMC, mainly on lung cancer, but also some other organs. HHG-imaging reveals histology-like architectural features and cellula r details, while also providing complementary information such as cle ar differentiation between collagen and elastin. In addition, we are working on AI models to automatically analyze the images. Therefore, HHG has promising clinical applications and may even create opportuni ty for the ‘one-stop-shop’. 12:50 -13:45 Prof. Dr. Marcel o Ackermann, director ARCNL Titel: Pushi ng for record reflectivity for soft X-ray and EUV multilayers Abstract: EUV lithography had taken the world by s torm. From ASML to NVIDIA – all rely on EUV technology to supply th e world with ever more powerful chips to enable our hunger for data a nd AI. One of the key items in lithography are the combination of wor ld leading light source (to make the photons) and optics (to transpor t the light and create an image on a wafer). The combination of both was probabaly one of the biggest challenges for EUV lithography. I wi ll present the science and development of the EUV multilayer mirrors, with d-spacing in the range of a few nm are at the heart of modern E UV lithography equipment. Their reflectivity determines how much ligh t gets reflected from the source to a wafer. The quality of the thin films making up the multilayer, but most importantly the sharpness of the interface between the layers is key to achieve high reflectivity . Roughness, intermixing and compound formation at these interfaces r esult in losses. In order to improve these interfaces, metrology is n eeded to resolve on the atomic level, what the driving mechanisms are that lead to reflectivity loss. At the sub-nm scale, a single techni que is often insufficient to fully understand the physics of intermix ing: Whereas TEM and XRR can resolve the local atomic or electronic d ensity, XPS is optimal to highlight compound formation. We demonstrat e that only a combination these techniques can truly resolve the inte rface. Using this knowledge on the nm-scale, we optimize the multilay er using diffusion barriers to limit intermixing and low energy ion p olishing to minimize roughness, resulting in record reflectivities fo r EUV lithography at 13.5nm. Colloquium with Prof. Dr. Marcelo Ackerm ann and Sylvia Spies (VU Amsterdam) END:VEVENT END:VCALENDAR