BEGIN:VCALENDAR VERSION:2.0 PRODID:-//Vrije Universiteit Amsterdam//NONSGML v1.0//EN NAME:Colloquium with Prof. Dr. Marcelo Ackermann & Sylvia Spies METHOD:PUBLISH BEGIN:VEVENT DTSTART:20260210T123000 DTEND:20260210T140000 DTSTAMP:20260210T123000 UID:colloquium-with-prof-dr-marcel@8F96275E-9F55-4B3F-A143-836282E12573 CREATED:20260924T234611 LOCATION: SUMMARY:Colloquium with Prof. Dr. Marcelo Ackermann & Sylvia Spies X-ALT-DESC;FMTTYPE=text/html:

Colloquium with Prof . Dr. Marcelo Ackermann and Sylvia Spies (VU Amsterdam)

12:30 - 12:50 Sylvia Spies, PhD candidate, Biophotonics &a mp; Medical Imaging, VU Amsterdam

Titel: Rapid Assessment of Biopsies using Higher Harmonic Generation Mic roscopy

Abstract: Histopathology is the gold s tandard for cancer diagnosis. However, this technique is time-consumi ng and labor-intensive and cannot provide rapid feedback during clini cal procedures. A rapid assessment of biopsies could help in decision making during biopsy procedures (or surgeries) and could create oppo rtunity for a 'one-stop-shop', where diagnosis and treatment are comb ined into one procedure. 

Higher harmonic generation (HHG) microscopy combines third harmonic generation (THG), second harmonic generation (SHG) and two- and three-photon excited autofluorescence (2PEF and 3PEF) to visualize cells, collagen, elastin and other fluor escent molecules, without any preparation or staining. Imaging is ach ieved within 1-3 seconds per field of view (400x400 μm), allowing a biopsy to be scanned in a few minutes.

We are performing multip le studies at the Amsterdam UMC, mainly on lung cancer, but also some other organs. HHG-imaging reveals histology-like architectural featu res and cellular details, while also providing complementary informat ion such as clear differentiation between collagen and elastin. In ad dition, we are working on AI models to automatically analyze the imag es. Therefore, HHG has promising clinical applications and may even c reate opportunity for the ‘one-stop-shop’.

12:50 -1 3:45 Prof. Dr. Marcelo Ackermann, director ARCNL 

Titel:  Pushing for record reflectivity for soft X-ray and EUV multilayers

Abstract: EUV lit hography had taken the world by storm. From ASML to NVIDIA – all re ly on EUV technology to supply the world with ever more powerful chip s to enable our hunger for data and AI. One of the key items in litho graphy are the combination of world leading light source (to make the photons) and optics (to transport the light and create an image on a wafer). The combination of both was probabaly one of the biggest cha llenges for EUV lithography. I will present the science and developme nt of the EUV multilayer mirrors, with d-spacing in the range of a fe w nm are at the heart of modern EUV lithography equipment. Their refl ectivity determines how much light gets reflected from the source to a wafer. The quality of the thin films making up the multilayer, but most importantly the sharpness of the interface between the layers is key to achieve high reflectivity. Roughness, intermixing and compoun d formation at these interfaces result in losses. In order to improve these interfaces, metrology is needed to resolve on the atomic level , what the driving mechanisms are that lead to reflectivity loss. At the sub-nm scale, a single technique is often insufficient to fully u nderstand the physics of intermixing: Whereas TEM and XRR can resolve the local atomic or electronic density, XPS is optimal to highlight compound formation. We demonstrate that only a combination these tech niques can truly resolve the interface. Using this knowledge on the n m-scale, we optimize the multilayer using diffusion barriers to limit intermixing and low energy ion polishing to minimize roughness, resu lting in record reflectivities for EUV lithography at 13.5nm.

DESCRIPTION: Colloquium with Prof. Dr. Marcelo Ackermann and Sylv ia Spies (VU Amsterdam) 12:30 - 12:50 Sylvia Spies, PhD candi date, Biophotonics & Medical Imaging, VU AmsterdamTitel: Rapid Assessment of Biopsies using Higher Harmonic Generation MicroscopyAbstract: Histopathology is the gold standard for cancer diagnosis. However, this technique is time- consuming and labor-intensive and cannot provide rapid feedback durin g clinical procedures. A rapid assessment of biopsies could help in d ecision making during biopsy procedures (or surgeries) and could crea te opportunity for a 'one-stop-shop', where diagnosis and treatment a re combined into one procedure. Higher harmonic generation (HHG) microscopy combines third harmonic generation (THG), second harmonic generation (SHG) and two- and three-photon excited autofluorescence (2PEF and 3PEF) to visualize cells, collagen, elastin and other fluor escent molecules, without any preparation or staining. Imaging is ach ieved within 1-3 seconds per field of view (400x400 μm), allowing a biopsy to be scanned in a few minutes.We are performing multiple stud ies at the Amsterdam UMC, mainly on lung cancer, but also some other organs. HHG-imaging reveals histology-like architectural features and cellular details, while also providing complementary information suc h as clear differentiation between collagen and elastin. In addition, we are working on AI models to automatically analyze the images. The refore, HHG has promising clinical applications and may even create o pportunity for the ‘one-stop-shop’.12:50 -13:45 Prof. Dr. Marcelo Ackermann, director ARCNL Titel:  Pushing for record reflectivity for soft X-ray and EUV multilayersAbstract: EUV lithography had taken the world by storm. From ASML to NVIDIA – all rely on EUV technology to supp ly the world with ever more powerful chips to enable our hunger for d ata and AI. One of the key items in lithography are the combination o f world leading light source (to make the photons) and optics (to tra nsport the light and create an image on a wafer). The combination of both was probabaly one of the biggest challenges for EUV lithography. I will present the science and development of the EUV multilayer mir rors, with d-spacing in the range of a few nm are at the heart of mod ern EUV lithography equipment. Their reflectivity determines how much light gets reflected from the source to a wafer. The quality of the thin films making up the multilayer, but most importantly the sharpne ss of the interface between the layers is key to achieve high reflect ivity. Roughness, intermixing and compound formation at these interfa ces result in losses. In order to improve these interfaces, metrology is needed to resolve on the atomic level, what the driving mechanism s are that lead to reflectivity loss. At the sub-nm scale, a single t echnique is often insufficient to fully understand the physics of int ermixing: Whereas TEM and XRR can resolve the local atomic or electro nic density, XPS is optimal to highlight compound formation. We demon strate that only a combination these techniques can truly resolve the interface. Using this knowledge on the nm-scale, we optimize the mul tilayer using diffusion barriers to limit intermixing and low energy ion polishing to minimize roughness, resulting in record reflectiviti es for EUV lithography at 13.5nm. END:VEVENT END:VCALENDAR